Nien-Tze Yeh : rechercher sur Z-Library

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1

Self-assembled In/sub 0.5/Ga/sub 0.5/As quantum-dot lasers with doped active region

Nien-Tze Yeh, Jia-Ming Lee, Tzer-En Nee, Jen-Inn Chyi

Journal:

IEEE Photonics Technology Letters

Année:

2000

Langue:

english

Fichier:

PDF, 50 KB

english, 2000

2

1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition

Kun-Fu Huang, Tung-Po Hsieh, Nien-Tze Yeh, Wen-Jeng Ho, Jen-Inn Chyi, Meng-Chyi Wu

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 380 KB

english, 2004

3

Improved electroluminescence of InAs quantum dots with strain reducing layer

Nien-Tze Yeh, Tzer-En Nee, Jen-Inn Chyi, Chih-Ta Chia, Tzu-Min Hsu, Chien-Chi Huang

Journal:

Journal of Crystal Growth

Année:

2001

Langue:

english

Fichier:

PDF, 135 KB

english, 2001

4

Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices

Nien-Tze Yeh, Tzer-En Nee, Jen-Inn Chyi

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 183 KB

english, 1999

5

High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Tzer-En Nee, Nien-Tze Yeh, Jia-Ming Lee, Jen-Inn Chyi, Ching-Ting Lee

Journal:

Journal of Crystal Growth

Année:

1999

Langue:

english

Fichier:

PDF, 125 KB

english, 1999

6

Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals

Ching-Ting Lee, Hung-Pin Shiao, Nien-Tze Yeh, Chang-Da Tsai, Yen-Tang Lyu, Yuan-Kuang Tu

Journal:

Solid-State Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 329 KB

english, 1997

7

Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy

Tzer-En Nee, Nien-Tze Yeh, Jen-Inn Chyi, Ching-Ting Lee

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 262 KB

english, 1998

8

Sb-based semiconductors for low power electronics

Yeh, Nien-Tze, Chiu, Pei-Chin, Chyi, Jen-Inn, Ren, Fan, Pearton, Stephen J.

Journal:

Journal of Materials Chemistry C

Année:

2013

Langue:

english

Fichier:

PDF, 1.42 MB

english, 2013

9

[IEEE IEEE International Symposium on Compound Semiconductors - San Diego, CA, USA (25-27 Aug. 2003)] 2003 International Symposium on Compound Semiconductors - Selective growth of InAs quantum dots on patterned GaAs substrate by metal-organic chemical vapor deposition

Tung-Po Hsieh,, Pe-Chin Chiu,, Yu-Chuan Liu,, Nien-Tze Yeh,, Wen-Jeng Ho,, Jen-Inn Chyi,

Année:

2003

Langue:

english

Fichier:

PDF, 170 KB

english, 2003

10

Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer

Chiu, Pei-Chin, Hsueh, Wei-Jen, Yeh, Nien-Tze, Cheng, Chao-Ching, Lin, You-Ru, Ko, Chih-Hsin, Wann, Clement H., Chyi, Jen-Inn

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2013

Langue:

english

Fichier:

PDF, 2.00 MB

english, 2013

11

[IEEE 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) - Kyoto, Japan (2013.06.30-2013.07.4)] 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR) - Efficiency improvement of GaN light emitting diodes on Si by double island growth method

Liu, Hsueh-Hsing, Cheng, Lung-Chieh, Yeh, Nien-Tze, Liao, Chen-Zi, Chyi, Jen-Inn

Année:

2013

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2013

12

In[sub 0.6]Ga[sub 0.4]As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

Jiang, Lin, Li, Sheng S., Yeh, Nien-Tze, Chyi, Jen-Inn, Ross, C. E., Jones, K. S.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 323 KB

english, 2003

13

InGaAsN∕GaAs quantum-well lasers using two-step and nitride passivation growth

Chiu, Pei-Chin, Yeh, Nien-Tze, Hong, Chao-Chi, Hsieh, Tung Po, Tsai, Yao-Tsong, Ho, Wen-Jeng, Chyi, Jen-Inn

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 267 KB

english, 2005

14

1.55 μm emission from InAs quantum dots grown on GaAs

Hsieh, Tung-Po, Chiu, Pei-Chin, Chyi, Jen-Inn, Yeh, Nien-Tze, Ho, Wen-Jeng, Chang, Wen-Hao, Hsu, Tzu-Min

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 367 KB

english, 2005

15

[Opt. Soc. America Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Conference Edition - Long Beach, CA, USA (19-24 May 2002)] Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges - Mutually exclusive behavior of In and N atom in highly strained GaInNAs/GaAs quantum wells by MOCVD

Bing-Ruey Wu,, Kun-Fu Huang,, Nien-Tz Yeh,, Wen-Jang Ho,

Année:

2002

Langue:

english

Fichier:

PDF, 145 KB

english, 2002

16

[IEEE International Conference on Indium Phosphide and Related Materials, 2005. - Glasgow, Scotland (May 8-12, 2005)] International Conference on Indium Phosphide and Related Materials, 2005. - InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth

Nien-Tze Yeh,, Pei-Chin Chiu,, Yao-Tsong Tsai,, Chao-Chi Hong,, Tung-Po Hsieh,, Wen-Jeng Ho,, Jen-Inn Chyi,

Année:

2005

Langue:

english

Fichier:

PDF, 565 KB

english, 2005

17

Room-Temperature Operation of In 0.5 Ga 0.5 As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

Nee, Tzer-En, Yeh, Nien-Tze, Shiao, Po-Wen, Chyi, Jen-Inn, Lee, Ching-Ting

Journal:

Japanese Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 82 KB

english, 1999

18

SPIE Proceedings [SPIE AeroSense 2003 - Orlando, FL (Monday 21 April 2003)] Infrared Technology and Applications XXIX - An In0.6Ga0.4As/GaAs quantum dot infrared photodetector with operating temperature up to 260K

Jiang, Lin, Li, Sheng S., Yeh, Nien-Tze, Chyi, Jen-Inn, Andresen, Bjorn F., Fulop, Gabor F.

Année:

2003

Langue:

english

Fichier:

PDF, 201 KB

english, 2003

19

Photoluminescence Characteristics of Self-Assembled In 0.5 Ga 0.5 As Quantum Dots on Vicinal GaAs Substrates

Yeh, Nien-Tze, Nee, Tzer-En, Shiao, Po-Wen, Chang, Mao-Nan, Chyi, Jen-Inn, Lee, andChing-Ting

Journal:

Japanese Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 599 KB

english, 1999

20

Growth of low density InGaAs quantum dots for single photon sources by metal–organic chemical vapour deposition

Hsieh, Tung-Po, Chang, Hsiang-Szu, Chen, Wen-Yen, Chang, Wen-Hao, Hsu, Tzu Min, Yeh, Nien-Tze, Ho, Wen-Jeng, Chiu, Pei-Chin, Chyi, Jen-Inn

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 528 KB

english, 2006

21

Investigation of InAs∕GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer

Jiang, Lin, Li, Sheng S., Yeh, Nien-Tze, Chyi, Jen-Inn, Tidrow, M.Z.

Journal:

Electronics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 252 KB

english, 2002

22

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

Yeh, Nien-Tze, Liu, Wei-Shen, Chen, Shu-Han, Chyi, Jen-Inn

Journal:

MRS Proceedings

Année:

2000

Langue:

english

Fichier:

PDF, 55 KB

english, 2000